Name: 두꺼운 350 um 2 인치 단일 결정 인듐-인 반도체 기판 프라임
Uploaded: 2026-03-10CDT21:17:53-05:00
Duration: 5 s
Description: Discover the high-quality Single Crystal InP Indium Phosphide Wafers with thickness ranging from 350-650um. Ideal for high-frequency, high-speed, and high-power microwave devices, these wafers are precision-engineered for superior performance in electronics and optics.

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두꺼운 350 um 2 인치 단일 결정 인듐-인 반도체 기판 프라임

다른 화면

February 20, 2023

예어: 반도체 기질

잡담 저희에게 연락하십시오

태그:

#반도체 웨이퍼 #웨이퍼 기질 #gasb 기질

비디오 설명:

Discover the high-quality Single Crystal InP Indium Phosphide Wafers with thickness ranging from 350-650um. Ideal for high-frequency, high-speed, and high-power microwave devices, these wafers are precision-engineered for superior performance in electronics and optics.