탄화 규소 웨이퍼

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탄화 규소 웨이퍼

다른 화면

April 08, 2025

카테고리 연결: 실리콘 탄화물 웨이퍼

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태그:

#실리콘 탄화물 기질 #sic 웨이퍼 #사파이어 웨이퍼에 실리콘

개요: Discover the High Purity Semi-Insulating HPSI SiC Powder, a 99.9999% purity material essential for power electronics, optoelectronic devices, and high-temperature applications. Learn how this advanced silicon carbide powder drives next-generation semiconductor crystal growth.

관련 제품 특징:

Exceptional purity of ≥ 99.9999% (6N) for high-performance applications.
Particle size ranges from 0.5 µm to 10 µm for uniform processing.
High resistivity between 10⁵ - 10⁷ Ω*cm for semi-insulating properties.
Superior thermal conductivity of ~490 W/m*K for efficient heat dissipation.
~3.26 eV의 넓은 밴드갭은 고전력 및 고주파 장치에 이상적입니다.
Extreme hardness with a Mohs rating of 9.5 for durability.
Used in Physical Vapor Transport (PVT) for SiC single crystal growth.
Customizable particle size, purity, and doping for specific needs.

자주 묻는 질문:

What is HPSI silicon carbide (SiC) powder used for?

HPSI SiC powder is used in sandblasting injectors, automotive water pump seals, bearings, pump components, and extrusion dies, leveraging its high hardness, abrasion resistance, and corrosion resistance.
HPSI 실리콘 카비드 (SiC) 파우더는 무엇입니까?

HPSI (High Purity Sintered) 실리콘 카비드 파우더는 첨단 시너링 공정을 통해 제조된 고순도 고밀도 SiC 물질입니다.반도체 및 고성능 애플리케이션에 이상적입니다..
Can HPSI SiC powder be customized for specific applications?

Yes, HPSI SiC powder can be tailored in terms of particle size, purity level, and doping concentration to meet specific industrial or research requirements.
How does HPSI SiC powder directly impact semiconductor wafer quality?

Its purity, particle size, and crystal phase directly determine the quality and performance of semiconductor wafers, ensuring high efficiency and reliability in electronic devices.