개요: Discover the advanced Wafer Bonder Equipment designed for high-precision bonding of silicon carbide (SiC) wafers. This equipment supports room temperature and hydrophilic bonding for 4, 6, 8, and 12-inch wafers, ideal for SiC-Si and SiC-SiC applications. Perfect for power semiconductor manufacturing and research.
관련 제품 특징:
SiC 웨이퍼에 대한 실온 및 친수성 접합 기술을 지원합니다.
Compatible with 4-inch, 6-inch, 8-inch, and 12-inch wafer sizes.
High-accuracy optical alignment system with ≤ ±1 µm precision.
Adjustable bonding pressure from 0-5 MPa for optimal results.
Temperature range from room temp up to 400°C for pre/post treatment.
High vacuum chamber ensures particle-free bonding environment.
Touchscreen interface with programmable recipes for easy operation.
Optional automatic wafer loading/unloading for high-throughput production.
자주 묻는 질문:
What's the main advantage of bonding SiC at room temperature?
It avoids thermal stress and material deformation, crucial for brittle or mismatched thermal expansion substrates like SiC.
Can this equipment be used for temporary bonding?
While this unit specializes in permanent bonding, a variant with temporary bonding functionality is available upon request.
How do you ensure alignment for high-precision wafers?
The system uses optical alignment with sub-micron resolution and auto-correction algorithms.