초고전압 MOSFET용 4H-SiC 에피타시얼 웨이퍼 (100~500μm, 6인치)

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September 02, 2025
비디오 설명:
Discover our 4H-SiC Epitaxial Wafers, engineered for ultra-high voltage MOSFETs (100–500 μm, 6 inch). Perfect for electric vehicles, smart grids, and renewable energy, these wafers offer superior thermal properties and customizable parameters for next-gen power electronics.
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