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| 브랜드 이름: | ZMSH |
| 모델 번호: | 3C-N SiC 웨이퍼 |
| MOQ: | 10 피스 |
| 포장에 대한 세부 사항: | 멀티 웨이퍼 카세트 또는 단일 웨이퍼 컨테이너 |
| 지불 조건: | t/t |
The 4 inch 3C-N Type 3C-SiC Silicon Carbide Wafers offer superior performance characteristics for advanced semiconductor applications.
Cubic silicon carbide (3C-SiC) exhibits better carrier mobility, thermal conductivity, and mechanical properties compared to 4H-SiC. With lower defect density at the oxide gate interface, 3C-SiC enables manufacturing of high-voltage, reliable, and long-life devices. While typically prepared on Si substrates, bulk 3C-SiC wafers present a cost-effective solution for power devices in the 600V-1200V range.
| Parameter | Zero MPD | Standard Production (P Grade) | Dummy Grade (D Grade) |
|---|---|---|---|
| Diameter | 99.5 mm~100.0 mm | ||
| Thickness (4H-N) | 350 μm±15 μm | 350 μm±25 μm | - |
| Thickness (4H-SI) | 500 μm±15 μm | 500 μm±25 μm | - |
| Wafer Orientation | Off axis: 4.0° toward <1120> ±0.5° for 4H-N On axis: <0001>±0.5° for 4H-SI |
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| Micropipe Density (4H-N) | ≤0.2 cm-2 | ≤2 cm-2 | ≤15 cm-2 |
| Micropipe Density (4H-SI) | ≤1 cm-2 | ≤5 cm-2 | ≤15 cm-2 |
| Resistivity (4H-N) | 0.015~0.024 Ω*cm | 0.015~0.028 Ω*cm | - |
| Resistivity (4H-SI) | ≥1E10 Ω*cm | ≥1E5 Ω*cm | - |
| Primary Flat Orientation | {10-10} ±5.0° | ||
| Primary Flat Length | 32.5 mm ± 2.0 mm | ||
| Secondary Flat Length | 18.0 mm ± 2.0 mm | ||
| Edge Exclusion | 3 mm | ||
| LTV/TTV/Bow/Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | - |
A SiC wafer is a single-crystal substrate made from silicon and carbon atoms. As a wide-bandgap semiconductor material, it's used in next-generation power electronics, RF devices, and high-temperature applications. Its superior properties enable smaller, faster, and more energy-efficient electronic devices for electric vehicles, renewable energy systems, and advanced communication technologies.
3C-SiC (Cubic Silicon Carbide) is a cubic crystal form of silicon carbide characterized by high electron mobility, excellent thermal stability, and compatibility with silicon substrates. It's widely used for high-speed, low-power, and cost-effective semiconductor devices.
SiC (Silicon Carbide) excels in high-power, high-voltage, high-temperature applications such as electric vehicles and renewable energy systems. GaN (Gallium Nitride) performs better in high-frequency, low-to-medium voltage applications like fast chargers and 5G systems.
